Micron Abandons 4F² DRAM for 3D Architecture and High NA EUV

1 reports archived0 independent sourcesupdated 10/22/2026, 09:31:36

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Micron announced that 4F² DRAM lacks a viable scaling path due to cost and complexity issues, pivoting instead to 3D DRAM. The company's 8th-generation node (1ε) will introduce wafer bonding, while the first sub-10nm node (ζÅ) plans to adopt High NA EUV lithography, aiming for significant performance gains through 3D-stacked CMOS logic circuits.

LATEST/Micron announced that 4F² DRAM lacks a viable scaling path due to cost and complexity issues, pivoting instead to 3D DRAM. The company's 8th-generation node (1ε) will introduce wafer bonding, while the first sub-10nm node (ζÅ) plans to adopt High NA EUV lithography, aiming for significant performance gains through 3D-stacked CMOS logic circuits.

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IT之家 · IT业界T2Oct 22, 09:31·78 pts
Micron Abandons 4F² DRAM for 3D Architecture and High NA EUV
- Micron deems 4F² DRAM unscalable, establishing 3D DRAM as the primary future path.
- Node 1ε introduces wafer bonding, while ζÅ adopts High NA EUV to advance sub-10nm processes.
- CMOS logic circuits in DRAM will also be 3D-stacked to optimize overall performance and density.
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